| 摘要 |
PURPOSE:To reduce the areal loss when a thin film type photoelectric conversion device is formed, especially at its coupled part, by a method wherein a groove or an isolated groove is formed on the non-single crystal semiconductor having silicon as the main ingredient using an argon laser beam of the wavelength of prescribed nm or below. CONSTITUTION:Output is applied by an argon laser processing machine on a transmitting conductive film 2, having the tin oxide as the main ingredient, whereon a transmitting conductive film 2 such as ITO(300-1,500Angstrom )+SnO2(200- 400Angstrom ) or halogen element is added on the whole upper surface of the transmitting substrate 1 having an insulating surface, a laser beam is made to irradiate from the film side by controlling the sopt diameter of 10muphi using a microcomputer. A scale-like flaw of 1-3mum is generated on the substrate located below a groove 17 when a YAG laser is used, but the depth of flaw is 0.1mum or less when the continuously emitting light source of short wave length of 600nm or less is used, and no practical trouble is observed thereon. Thus the film 2 shown in the diagram constituting the first electrode is cut, regions 14 and 19 are insulated by isolation, and the first groove is formed. |
