| 摘要 |
PURPOSE:To enable a process of clean flat selective epitaxy with high accuracy by attaching an amorphous or polycrystalline film on a semiconductor single crystal substrate, changing a designated position into a single crystal through heating and annealing and depositing a semiconductor substance under vacuum at an epitaxial temperature or higher. CONSTITUTION:A semi-insulating GaAs substrate to which Cr is doped is chemically treated, the vapor of Ga and As is projected, and a GaAs film is grown to obtain an morphous film 30. A predetermined position is scanned while electron rays 40 are projected, and the GaAs amorphous film 30 is changed into a single crystal. Ga and As are projected, single crystal GaAs 51 is grown to a section 31 turned into the single crystal, and polycrystalline GaAs 50 is grown on the amorphous GaAs 30. |
