| 摘要 |
PURPOSE:To obtain a resist film good in strippability and enhanced in heat resistance in a short time and to form a pattern high in precision by forming a positive type photoresist pattern on a semiconductor substrate and irradiating the resist with UV rays in an atm. contg. a gaseous hydrocarbon. CONSTITUTION:A pattern is formed on an Si substrate by using a positive type photoresist and irradiated with far UV rays of about 254nm in an energy density of about 10mW/cm<2> for about 5min. in an atm. contg. CH4, C2H5, n-C3H8, or CHidenticalCH. It is immersed in a stripping agent of phenol, dichlorobenzene, tetrachloroethylene, alkylbenzenesulfonic acid, or the like for 5min to enable perfect stripping. The film exposed to the far UV rays is high in heat resistance, and not decayed or damaged by sputter etching and reactive etching, etc., thus permitting formation of a pattern high in precision on a semiconductor wafer. |
