METHOD FOR PRODUCTION OF DRAM

摘要

The manufacturing method for the volatile DRAM having a trench type capacitor and a stack type capacitor on a single substrate, comprises the steps of forming a trench type capacitor structure: etching a region for connecting between the N+ type impurity doped region (2) and a buried dielectric region (3); coating a polysilicon layer thereon to form a charge storing electric layer (9) by using a photomasking process; forming a dielectric film (10) on the layer (9); and forming a plate electrode layer (11) thereon.