| 摘要 |
PURPOSE:To obtain the titled device which can sufficiently deal with high resolution by a method wherein a control electrode region is put in floating state, and then the potential thereof is controlled via capacitor, in said device which makes carriers generated by photoelectromotive force accumulate to the electrode region of a semiconductor transistor consisting of three terminals. CONSTITUTION:An n<-> type layer 5 is epitaxially grown on an n type or n<+> type Si substrate 1, and formed in island form by being surrounded with an element isolation region 4 of SiO2, etc. Next, a p type base region is diffusion-formed in the surface layer part of the island-formed layer 5, and an n<+> type emitter region 7 is provided therein. The entire surface is covered with an insulation film 3, a window being bored, and an Al wiring 8 installed from the region 7 to the edge of the film 3, and an electrode on the region 6 via film 3, and the entire surface is covered with a PSG film 2. The region 6 is put in floating state, the potential thereof being controlled by the capacitor consisting of the electrode 9, film 3, and region 6 in such a manner, thus being made to carry out the action of carrier accumulation, read-out, and refreshing. |
