发明名称 COPPER-CARBON FIBER COMPOSITE MATERIAL FOR SEMICONDUCTOR
摘要 PURPOSE:To contrive to avoid the generation of voids at the time of soldering by providing Ni or Co on the titled material as the base metallic layer, and then providing an Ag coating layer thereon. CONSTITUTION:The Ni or Co is provided on said material as the base metallic layer, and the Ag coating layer is provided thereon. The reason why the base metallic layer of Ni or Co is provided under the Ag coating layer is that Cu thermally diffuses at the time of soldering and leads to the contamination of an Si pellet, unless such a base metallic layer is provided. That is, the Ni or Co layer is indispensable as the barrier against Cu diffusion. This manner enables to obtain the excellent titled material without the generation of voids at the time of soldering.
申请公布号 JPS6012738(A) 申请公布日期 1985.01.23
申请号 JP19830120499 申请日期 1983.07.01
申请人 HITACHI DENSEN KK 发明人 YAMAGISHI RIYOUZOU;ISHIKAWA TETSUO;YOSHIOKA OSAMU;KAYANE KOUICHI;YOSHIDA HIROMICHI
分类号 C22C47/02;B23K1/19;H01L21/52;H01L21/58;(IPC1-7):H01L21/58;C22C1/09 主分类号 C22C47/02
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