| 摘要 |
PURPOSE:To obtain the titled device sufficiently realizing high resolution by a method wherein the potential of a control electrode region of floating state provided in a semiconductor transistor is controlled via capacitor, where the potential is controlled by means of an IGFET constituting the device during the action of carrier accumulation, read-out, and refreshing. CONSTITUTION:An n<-> type layer 5 is epitaxially grown on an n<+> type Si substrate 1 and then formed into island form by means of an element isolation region 4 made of an insulation film, where the base region 6 of a p type bi-polar transistor is diffusion-formed, and an n<+> type emitter region 7 is provided therein. Next, the entire surface is covered with an SiO2 film 3, a window being opened, and an Al wiring 8 contacting the region 7 being formed. An electrode 9 is provided on the region 6 via film 3, and an Al wirng 10 is installed. An SiO2 film 2 is adhered over the entire surface, and an Al collector electrode 12 is adhered to the back surface of a substrate 1 via n<+> type layer 11. In this construction, the base region 6 is kept in floating state and then the surface of the device is irradiated with a light 20 while the potential of the electrode 9 is controlled by the impression of pulses via capacitor generating in the element. |
