| 发明名称 |
FABRICATION METHOD FOR INTEGRATED CIRCUIT STRUCTURES INCLUDING FIELD EFFECT TRANSISTORS OF SUB-MICROMETER GATE LENGTH, AND INTEGRATED CIRCUIT STRUCTURE FABRICATED BY THIS METHOD |
| 摘要 |
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| 申请公布号 |
EP0083783(A3) |
申请公布日期 |
1985.01.23 |
| 申请号 |
EP19820111970 |
申请日期 |
1982.12.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DE LA MONEDA, FRANCISCO HOMERO;DOCKERTY, ROBERT CHARLES |
| 分类号 |
H01L21/28;H01L21/316;H01L21/762;H01L21/8234;H01L21/8246;H01L27/088;H01L27/112;H01L29/78;(IPC1-7):H01L21/82;H01L21/76;H01L27/08 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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