| 摘要 |
PURPOSE:To enable the signal transmission and reception between I<2>L blocks without the increase of the chip area by a method wherein island regions isolated from each other are formed in a semiconductor substrate, each of which is provided with an I<2>L element, and a p-n junction is formed via a insulation film by being positioned on the isolated regions and then used as the diode for adjusting potential between the two I<2>L elements. CONSTITUTION:Two n<+> type buried layers 13 are diffusion-formed in the surface layer part of a p type Si substrate 1, and an n type layer 2 is epitaxially grown over the entire surface including those and then divided into island regions 1 and 2 while being made to respectively contain the layers 13 by means of a p type region 4. Next, a p type base region 9 for an inverter and an n<+> type ring region 14 for emitter lead-out are provided in the region 1, and a p type region 15 for an injector, a p type base region 16 for an inverter and an n<+> type collector region 10 positioned therein are formed in the region 2. Thereafter, the entire surface is covered with an SiO2 film 17, and the diode consisting of the p type layer 18 and the n type layer 19 of polycrystalline Si is formed by being positioned on the region 4, each of which is connected to the regions 9 and 10 by means of Al wirings 8 and 11. |
