| 摘要 |
PURPOSE:To unify gas concentration in the longitudinal direction of reaction tube by supplying gas through a through-hole connected to the gas supply path formed at the inside of flat plate electrode. CONSTITUTION:At the one end of reaction tube 1, a gas supply port 2 is provided, at the other end of reaction tube 1, a gas exhaust port 3 is provided. At the inside of such reaction tube, a flat plate electrode 5 which is formed with parallel multilayer and is capable of holding a semiconductor wafer 4 is arranged. The electrode 5 is connected to a high frequency power supply 6 and generates gas plasma at the electrode 5. At the inside of electrode 5, a gas supply path 6 is provided and the gas is supplied to the gas supply path 6 through the supply tube 7. A plurality of through-holes 8 are provided from the surface of electrode 5 to the supply path 6, in order to supply the gas to the periphery of wafer 4. The gas concentration in the reaction tube 5 can be unified through such constitution and thereby thickness of thin film formed on the wafer 4 can be unified. |
