| 摘要 |
PURPOSE:To obtain the titled device of a short channel length and sufficient light shielding by a method wherein an electrode for main electrode lead-out is formed on an insulation substrate, the drain, gate, and source regions are provided by lamination at the end of that electrode while covering the side surface of the end, an aperture is provided after the entire surface is covered with a gate insulation film, and a drain wiring, gate electrode, and source wiring are mounted, respectively. CONSTITUTION:The region 22 for main electrode lead-out made of amorphous Si or ITO is adhered on a glass substrate 1, and the drain region 2 made of amorphous Si, etc., thin film 5 serving as the high resistant gate region, and source region 3 are formed by lamination at one end thereof while covering the side surface of the end. Next, all these regions are covered with a gate insulation film 6, an aperture being bored, and the source wiring 13 being mounted in the region 3, drain wiring 12 in the region 22, and gate electrode 4 in the region 5 via film 6, respectively. Thus, the channel length is determined by the length of the thin film 5, and the light shielding in the whole is made sufficient enough. |
