| 发明名称 |
Variable rate semiconductor deposition process |
| 摘要 |
A layer of a conductive material consisting of aluminum alone or in combination with a small percentage of copper and/or silicon is formed on a semiconductor surface in a two-step deposition process in such a manner as to largely avoid serious continuity defects in the layer.
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| 申请公布号 |
US4495221(A) |
申请公布日期 |
1985.01.22 |
| 申请号 |
US19820436863 |
申请日期 |
1982.10.26 |
| 申请人 |
SIGNETICS CORPORATION |
发明人 |
BROADBENT, ELIOT K. |
| 分类号 |
C23C14/24;H01L21/203;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):B05D5/12 |
主分类号 |
C23C14/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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