发明名称 MIS or SIS Solar cells
摘要 The function of the insulating film in MIS and SIS solar cells can also be fulfilled by a semiconductor with a sufficiently large energy gap. The doping of the quasi insulating layer guarantees good fill factors and short-circuit current densities also at a relatively high film thickness. For cadmium selenide solar cells with a quasi insulating film made of zinc selenide, copper is preferably used as a doping material.
申请公布号 US4495375(A) 申请公布日期 1985.01.22
申请号 US19830531718 申请日期 1983.09.13
申请人 BATTELLE-INSTITUT E.V. 发明人 RICKUS, EDMUND;JAEGER, KARLHEINZ
分类号 H01L31/0296;H01L31/06;H01L31/062;(IPC1-7):H01L31/06 主分类号 H01L31/0296
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