发明名称 |
MIS or SIS Solar cells |
摘要 |
The function of the insulating film in MIS and SIS solar cells can also be fulfilled by a semiconductor with a sufficiently large energy gap. The doping of the quasi insulating layer guarantees good fill factors and short-circuit current densities also at a relatively high film thickness. For cadmium selenide solar cells with a quasi insulating film made of zinc selenide, copper is preferably used as a doping material.
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申请公布号 |
US4495375(A) |
申请公布日期 |
1985.01.22 |
申请号 |
US19830531718 |
申请日期 |
1983.09.13 |
申请人 |
BATTELLE-INSTITUT E.V. |
发明人 |
RICKUS, EDMUND;JAEGER, KARLHEINZ |
分类号 |
H01L31/0296;H01L31/06;H01L31/062;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/0296 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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