| 摘要 |
PURPOSE:To inspect a defect of a pattern with high sensitivity by superposing and exposing an inversion reticle and a reticle to be inspected, forming plural transfer areas on a wafer, also shifting slightly images of both reticles, and checking a state of a resist pattern obtained by development. CONSTITUTION:A positive resist layer 100 is formed on a wafer W, and thereafter, baked, positioned on a moving stage, moved by each prescribed pitch in the (x) and (y) directions of the moving stage, exposed and developed by a luminous flux Lm from a mark reticle mark, and an image A of a mark is obtained. Subsequently, an inversion reticle is replaced, and it is exposed by the luminous flux Lm of a transfer area in the same way, and an inversion pattern latent image is formed. Subsequently, a positive pattern of a reticle to be inspected is transferred onto a latent image formed in the same way by using a positioned reticle to be inspected. By inspecting a defect P of the reticle to be inspected of a transfer pattern obtained by development, its defect is detected with high sensitivity. |
