| 发明名称 |
Dual species ion implantation of ternary compounds based on In-Ga-As |
| 摘要 |
A method for Ion implantation using multiple energy Be+ to produce p-type regions in n-In0.53Ga0.47As. A simple technique is used to develop capless annealing of InGaAs up to 700 DEG C. The ion implantation of silicon is then accomplished to create n+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.
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| 申请公布号 |
US4494995(A) |
申请公布日期 |
1985.01.22 |
| 申请号 |
US19830471083 |
申请日期 |
1983.03.01 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
TABATABAIE-ALAVI, KAMAL;CHOUDHURY, ABU N. M. M.;SLATER GABRIEL, NANCY J.;FONSTAD, CLIFTON G. |
| 分类号 |
H01L21/265;(IPC1-7):H01L21/265;H01L29/48;H01L29/56 |
主分类号 |
H01L21/265 |
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