| 摘要 |
A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the substrate, an intermediate layer, and an upper layer upon which the various photoresist compositions are located to define the electrode structures, the intermediate layer being composed of a metal which has different solubility characteristics than either the upper or lower metal layers so that the various layers can be selectively etched by means of suitable solvents.
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