| 摘要 |
<p>17 Semiconductor devices and their manufacture. A semiconductor device for example a p-i-n diode comprises a corrugated semiconductor body (1) having a plurality of complementary grooves (2a, 2b) and ridges (3a, 3b) on opposite sides of the body. The junction (13) between the p-type region (6) and the n-type intrinsic region (10) has substantially the same configuration as and extends substantially parallel to the surface (7), while the junction (14) between the n-type region (8) and the intrinsic region similarly extends substantially parallel to the surface (9). Devices with narrow instrinsic regions can be made accurately by diffusion of the p-type region (6) and the n-type region (8) because the whole of the diode can be made relatively thin, for example, 90 micrometres, without sacrificing strength and rigidity. As compared with an equivalent plane device, the active area, and so the current handling capability, is increased. To avoid premature breakdown the diode may be surrounded by a thicker peripheral portion (5). (Figure 1).</p> |
