| 发明名称 |
Process for forming thin film |
| 摘要 |
A thin film of a-Si, SiO2 or Si3N4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula SinH2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.
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| 申请公布号 |
US4495218(A) |
申请公布日期 |
1985.01.22 |
| 申请号 |
US19830534686 |
申请日期 |
1983.09.22 |
| 申请人 |
HITACHI, LTD. |
发明人 |
AZUMA, KAZUFUMI;NAKATANI, MITSUO;NATE, KAZUO;OKUNAKA, MASAAKI;YOKONO, HITOSHI |
| 分类号 |
C23C16/48;C23C16/24;C23C16/34;C23C16/40;H01L21/205;H01L21/268;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L31/04;(IPC1-7):C23C17/00 |
主分类号 |
C23C16/48 |
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