DEPRESSURIZED EPITAXIAL GROWING EQUIPMENT

摘要

PURPOSE:To make extremely high purity silicon single-crystal grow by forming at least the surface of a furnace wall of a reaction furnace with Si or SiC. CONSTITUTION:A reactive gas inlet 2 and a reactive gas outlet 3 are provided to a reaction furnace 1. Resistance heaters 4 are arranged around the reaction furnace 1 as furnace wall heaters. Wafers 6 are held on a holding means 5 in the furnace. Si or SiC is used as furnace wall material of the reaction furnace 1. With this constitution, the inside of the reaction furnace is depressurized to 5- 100Torr by evacuation through the outlet 3. Wafers 6 are heated to the temperature of approximately 1,100 deg.C. Reactive gas composed of SiHCl2 and PH3 is introduced with a carrier gas H2 into the furnace 1 through the inlet 2 and dispersed on the wafers 6 to make silicon single-crystal.