| 摘要 |
PURPOSE:To contrive to curtail measuring time, and to contrive to enhance working efficiency of a tester at the measurements of the characteristics of semiconductor elements by a method wherein the measurements are performed from the central elements of two wafers in an eddy type according to the parallel measurement method, and when the measurements come to the measuring elements at the boundary parts between the central parts and the peripheral parts of the wafers, the measurement method is changed over an alternative measurement method, and when come to the peripheral parts of the wafers, the measurements are changed again o ver the parallel measurement method. CONSTITUTION:Measurements are started according to the parallel measurement method from the central elements 6a, 6b of two wafers 5a, 5b, and the measurements are continued to adjoining elements in an eddy type from the central elements 6a, 6b hereafter. Because at the parallel measurements thereof, probability that fellow non-defective units are existing is high as to be nearly 100% at the central parts of the wafers, the measurements are continued at a speed nearly two times of an alternative measurement method. When the measurements come near by the peripheries at the central parts m1, n1 of the wafers, possibility that either of one side of the two elements 6a, 6b possibility of that either of one side of the two elements 6a, 6b to be measured at the same time becomes to be a defective unit is increased gradually. Therefore when defective units generate continuously for several times at least in one side of the two elements 6a, 6b to be measured at the same time, for example, it is detected to change the measurement method over the alternative measurement method. Accordingly, the measurements can be continued in a short time even when the combination of a non-defective element and a defective element is continued. |
