| 摘要 |
PURPOSE:To improve the degree of integration by extending and forming a source electrode and a drain electrode in the direction different from the direction which a source region and a drain region extend. CONSTITUTION:Masks for forming a source region and a drain region are shaped on an N type silicon substrate 31 by a photo-resist film 32. Boron ions are implanted as a P type impurity to form high-concentration P type regions 33. P type regions 35 are formed to the source region, the drain region and a region held by these regions by a photo-resist film 34. A photo-resist film 36 is shaped, and the ions of phosphorus P are implanted into a gate region by using a photo- lithography method to form N type regions 37. Implanted impurities are activated and diffused through annealing, and the depth of the high-concentration P type regions 33 is brought to approximately 1mum, the depth of the P type regions 35 to approximately 0.4mum and the depth of the N type regions 37 to approximately 0.2mum. Since the width of the P type regions 35 is not restricted by the limit of etching of a metal, the width can be reduced up to approximately 2mum at a minimum, and the degree of integration is improved. |
