| 摘要 |
PURPOSE:To enlarge widths of wirings, and to enable to remove an increase of resistance and disconnection at the step parts of the wirings by a method wherein a protective film is anisotropically etched to leave the protective film on the side walls of a mask material, and after then, the wiring film is selectively etched to be removed using the remaining protective film and the mask material. CONSTITUTION:After an SiO2 film pattern 14 is formed according to the PEP method on a polycrystalline silicon layer 13, a CVD-SiO2 film 15 is formed on the whole surface, and the CVD-SiO2 film 15' is left only on the side walls of the SiO2 film pattern 14 according to the RIE method. Because the polycrystalline silicon layer 13 is etched to be removed using the remaining CVD-SiO2 film 15' and the SiO2 film pattern 14 thereof as masks to form wirings 16, 16, the interval between the wirings 16, 16 can be reduced by the amount corresponding to the remaining CVD-SiO2 films 15', namely by 2L, and widths of the wirings can be enlarged by the amount thereof. |
