| 摘要 |
PURPOSE:To enable the formation of a high-concentration impurity diffusion region in a short time by forming the high-concentration impurity diffusion region to be formed on a semiconductor substrate under the condition that the substrate part of the semiconductor wafer is thick in advance of polishing. CONSTITUTION:After an epitaxial layer 2 is grown on one of the surfaces of a semiconductor substrate 1, another surface is subjected to chemical formation to be made porous to the predetermined depth. Then from this porous side 1', a high-concentration impurity diffusion layer 11 is formed on the semiconductor substrate 1. Furthermore, a device is formed in the epitaxial layer 2 by selective diffusion of impurity. After that, the porous layer 1 is cut down to expose the high-concentration impurity diffusion layer 11 and the metal layer 13 as an ohmic contact is formed on said layer 11. Then, the manufacturing processes as many as one hundred and several dozens for forming a plurality of semiconductor elements on the semiconductor wafer such as impurity diffusion can be performed under the condition that the substrate part is thick before polishing. Consequently, as a warpage or a crack is not produced, handling is easy and decrease of the yield due to the crack of the semiconductor wafer can be prevented. |
