| 摘要 |
PURPOSE:To enable to improve the periodicity of a photowaveguide by periodically varying the carrier density by implanting ions to the surface of the photowaveguide. CONSTITUTION:H<+> or Si<2+> ions are implanted to the surface of a P type InP layer 3 at a pitch P. When the light which propagates in a P type GaInAsP core layer 2 passes a distributed reflector 9 of a region that periodically varies in the carrier density, the refractive index periodically varies due to the variation in the carrier density, and feedback action is affected, thereby propagating in reverse direction. |
