| 摘要 |
PURPOSE:To curtail the manufacturing process of a mask and a semiconductor IC containing repetitive patterns of a large number, and moreover integrated in a high degree by a method wherein the image of a burn-off pattern is projected according to an electron beam to draw the repetitive patterns on a sample, and the image of a rectangular slit is deformed to be projected, and patterns excluding the repetitive patterns are drawn on the sample. CONSTITUTION:A first condenser 3 is weakened to irradiate an electron beam EB having an enlarged beam diameter on a burn-off patterns 13 according to a first deflecting coil 4, and the image of the burn-off pattern 13 is contracted to be projected and to be drawn on the prescribed position of a sample 11 surface through a slit deflector 6, a first projecting lens 7, a second aperture 8, a second projecting lens 9, a main deflector 10, etc. arranged behind a fist aperture 2. Then electrode wiring patterns excluding the repetitive patterns are drawn according to a variably rectangular beam on the sample 11 through the rectangular slit 12 of the aperture 2 and the functional parts arranged behind the aperture 2 to complete pattern drawing. Accordingly, drawing time to draw the device pattern containing the repetitive patterns of a large number is curtailed. |
