| 摘要 |
PURPOSE:To improve characteristics and yield according to bipolar logic by regulating the width W1 of a projecting section formed to the side surface of an N<+> type buried diffusion region or the width W2 of a notch section and the width We and length le of a P<+> type emitter region. CONSTITUTION:An N<+> type buried diffusion region N<+>b region 2 with a projecting section 8 having predetermined width W1 and length l1 is formed to one side surface (a), and a P<+> type emitter region 5 having prescribed width We and predetermined length le crossing the projecting section 8 in the N<+>b region 2 in a manner such as a rectangular manner is disposed to the upper section of the projecting section 8 in the N<+>b region 2 through an N type base layer 4 in prescribed width Wb. The width W1 of the projecting section 2 of the N<+>b region 2 and the width We and length le of the emitter region 5 are each prescribed to size corresponding to desired hFE on the basis of a preliminary experimentation. The length l1 of the projecting section 8 of the N<+>b region is prescribed to length obtained by summing the width We of the emitter region 5 crossing with the projecting section 8 and length l2, l3 corresponding to the absorption of errors on a mask alignment leaving on both sides of the region 5. The emitter region 5 is further prescribed to length or longer acquired by adding errors l4, l5 on the mask alignment to the width W1 of the projecting section 8 of the N<+>b region. |
