| 摘要 |
PURPOSE:To enable to attain extremely shallow junction when an IC chip is to be mounted in an IC vessel by a method wherein the temperature of the IC chip is risen sharply according to a lamp annealing method, and the temperature difference between the IC vessel is made to be in the specified range. CONSTITUTION:When an IC chip is to be mounted in an IC vessel of glass, etc., a halogen lamp is used as the light source of a lamp annealing method, irradiation is performed from the upper and lower sides of the IC chip to rise the temperature of the IC chip to about 300 deg.C, and the chip is mounted in the IC vessel of the temperature of 450 deg.C. At this invention, the temperature difference between the IC chip and the IC vessel is made to be in the range of 0-200 deg.C like this. Accordingly, the temperature difference between the surface and the back of the IC chip during the assembly process is made to 200 deg.C or less, and a phenomenon such as reduction of yield to be caused by destruction of junction can be checked. Moreover because the lamp annealing method is used, only several seconds is necessitated for the temperature rise of the IC chip, to process one chip by one chip can be attained, and this method has superior mass producibility. |
