| 摘要 |
According to this method, before sawing a suitably doped semiconductor slice 1 coated with metallisations 2 and 3, a chemical etching of the metallisations 2 and 3 is undertaken according to the pattern of the subsequent sawing. This avoids, during the subsequent manufacturing steps, making provision for lateral chemical etching of the metallisations and makes it possible to choose freely the material composing the metallisations. <IMAGE> |
