| 摘要 |
PURPOSE:To contrive improvement in dimensional accuracy by a method wherein the absorption coefficient of the first layer organic substance is optimized. CONSTITUTION:An Al film 2 which is the film to be processed is formed on an Si substrate 1, and the first organic substance layer 3 of approximately 2mum in thickness is formed on said Al film 2. A heat treatment is performed, and the absorption coefficient of the first organic substance layer 3 is designated at approximately 0.1. Subsequently, an intermediate layer 4 is formed. Then, a photoresist pattern 5 is formed, it is transferred to the intermediate layer 4, and a pattern 4' is formed. The pattern is transferred to the first organic layer substance layer 3 using the pattern 4' as a mask, and a pattern 3' is formed. The desired film thickness of the first organic substance layer 3 is 1-2mum, and the desired absorption coefficient is 0.08-0.2 or thereabout. |
