| 摘要 |
PURPOSE:To upgrade the electromigration resistance of a wiring for a semiconductor element without making the wiring width thereof increase significantly by a method wherein the wiring, which needs a certain sectional area, is formed of two conductors or more, each respectively having a sectional area smaller than that of the wiring. CONSTITUTION:A wiring for a semiconductor element, which needs a certain sectional area, is formed of two conductors or more, each respectively having a sectional area smaller than that of the wiring. For example, after an alloy containing a Cu and an Si was adhered onto a silicon substrate formed with a thermal oxide film thereon, a 100mum long wiring formed of three conductors, each respectively having a sectional area of 0.8, 2.0 and 3.8mum<2>, is made by a dry etching method. After being held at each temperature of 250, 350, 450 and 530 deg.C, this wiring is conducted at a temperature of 250 deg.C and in a current density of 2.5MA/cm<2>, and the lifetime thereof during a time ranging up to the time, when the wiring is disconnected, is measured. As a result, in case the thermal treating temperature is low (not higher than 350 deg.C), the lifetime of the wiring has a direct-proportional correlation with its own sectional area. However, in case of the heat temperature of 450 deg.C or more, the lifetime of the wiring having a sectional area of 0.8mum is rapidly prolonged, exceeding the lifetimes of the other two wirings having a larger sectional area respectively. |
