| 摘要 |
PURPOSE:To lower series resistance between a source electrode and a gate electrode, and to increase transfer conductance by using an ammonia or hydrogen peroxide group compound as an etching liquid for forming a recess. CONSTITUTION:A non-doped buffer layer 2 is formed on a semi-insulating substrate 1 mainly comprising GaAs, and an active layer 3 is formed on the buffer layer. A source electrode 4 and a drain electrode 5 are shaped. A slit pattern 7 is formed through a direct drawing by electron beams along a gate pattern and development treatment. A recess 21 is formed by etching the active layer 3 while using the slit pattern 7 as a mask by a recess etching liquid. An ammonia or hydrogen peroxide group aqueous solution is used as the recess etching liquid at that time. When a gate metal 23 and a gate electrode 24 are formed simultaneously, he flat section of the recess 21 does not remain on both sides of the gate electrode 24. An electron ray resist 6 and the gate metal 23 are lifted off, thus obtaining a semiconductor device. |
