发明名称 PHOTOCHEMICAL REACTION DEVICE
摘要 PURPOSE:To eliminate generation of the ozone and oxynitride to be generated by excitation of the residual gas in a vacuum with a photochemical vapor growth device by maintaining the gas region where the light irradiated from a light source passes under a low pressure. CONSTITUTION:A photochemical vapor growth device 201 for film formation is formed of a reaction chamber 205 having a gas control system 202, a susceptor 203 and a window 204 permitting transmission of UV rays and a vacuum vessel 209 housing an UV light source 206 and a reflecting plate 207. The vessel 209 is evacuated to a vacuum with a vacuum pump 210 and the part of the light source 206 is maintained under the pressure lower the atm. pressure. The above-mentioned device has the advantage in that the attenuation of UV rays and generation of ozone and oxynitride owing to absorption of the gas in the atm. air are obviated as the source 206 is housed in the vacuum vessel 209.
申请公布号 JPS609875(A) 申请公布日期 1985.01.18
申请号 JP19830115528 申请日期 1983.06.27
申请人 NIPPON DENKI KK 发明人 HAMANO KUNIYUKI;NUMAZAWA YOUICHIROU
分类号 B01J19/12;C23C16/48;(IPC1-7):C23C16/48 主分类号 B01J19/12
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