| 摘要 |
PURPOSE:To form a pattern causing no charge-up and having superior sensitivity, resolution and dry etching resistance by using poly(N-vinylcarbazole) having chloromethyl groups as a resist material. CONSTITUTION:A negative type resist pattern is formed using poly(N-vinylcarbazole) having chloromethyl groups as a resist material. Poly(N-vinylcarbazole) having a structure represented by formula I is chloromethylated and used. The chloromethylation is carried out to such a degree that several % or more of the vinylcarbazole components are chloromethylated. The chloromethylated monomer components are represented by formula II. The polymer used has several ten thousands - several hundred thousands, especially 100,000-300,000 average mol. wt. and <=1.4 degree of dispersion of mol.wt. |
