| 摘要 |
PURPOSE:To obtain a composite resist layer capable of forming a hyperfine pattern and having superior dry etching resistance by using a specified photosensitive and radiation sensitive org. polymer as the material of the upper layer of a composite resist layer consisting of two org. polymer layers. CONSTITUTION:A photosensitive and radiation sensitive org. polymer having repeating units represented by the formula (where R1 is a bivalent org. group, each of R2-R5 is methyl, ethyl, propyl or phenyl, and n is 1-5) is used as the material of the upper layer 5 of a composite resist layer consisting of two org. polymer layers 5, 6 formed on a substrate 4 for an element. Since said polymer has high sensitivity to ultraviolet rays and radiation, patterning can be carried out by conventional photoetching technique or electron beam or soft X-ray lithographic technique. The 2nd layer 6 is made of phenol novolak resin, polyimide resin, polystyrene or the like. |
