发明名称 Input signal level converter for an integrated CMOS digital circuit
摘要 The level circuit according to the invention consists of the series circuit of a p-channel MOS field-effect transistor comprising two n-channel MOS field-effect transistors, the p-channel MOS transistor being connected with its drain to the terminal with a supply potential Vcc and one n-channel MOS transistor being connected with its source to the terminal for the reference potential Vss. A further n-channel MOS field-effect transistor is connected with its source to a node between the two first n-channel transistors, with its gate to a node between the p-channel transistor and the n-channel transistor of the series circuit immediately connected to it. This node also forms the signal output of the level converter. The signal input is given by the gate of the two n-channel transistors forming, together with the p-channel transistor, the said series circuit, the gate of the p-channel transistor being either also connected to the signal input or being connected to the terminal for the reference potential. The level circuit has the advantage of a high gain and can be dimensioned in such a manner that the occurrence of transverse currents is eliminated in normal operation. <IMAGE>
申请公布号 DE3324030(A1) 申请公布日期 1985.01.17
申请号 DE19833324030 申请日期 1983.07.04
申请人 SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE 发明人 WAWERSIG, JUERGEN, ING.(GRAD.), 8000 MUENCHEN, DE
分类号 H03K3/3565;H03K19/0185;H03K19/0948;H03K19/096;(IPC1-7):H03K19/094;H03K19/092 主分类号 H03K3/3565
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