发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To form a superior resist micropattern good in adhesive strength to a substrate without deteriorating sensitivity and resolution by using 2-layer resist films each made of a specified polymer. CONSTITUTION:A <=0.1mum thin film made of one kind of polymer selected from a group B is formed on a substrate, and on this film another 0.1-0.2mum thin film made of one kind of polymer selected from a group A is formed to obtain 2- layer thin films. As the polymer of the group A, a homopolymer of a monomer represented by formula I (R1 is methyl or Cl, and R2 is halogenated alkyl) or a copolymer of it and another vinyl monomer, preferably, a polymer represented by formula II in which R3 is -CH2CF3, -CH(CH3)CF3, -C(CH3)2CF3, CH2CF2CHF2, or -CH(OCH3)CF3. The polymers of the group B are superior in solubility in org. solvents and adhesive strength to a substrate to said polymers of the group A, and they are decomposable with radiation, and a preferable monomer of them is represented by formula III in which R4 is 3-7 C alkyl. Such 2-layer resist films can be formed into a superior micropattern good in adhesive strength to the substrate with a small amt. of radiation, and can be used for microfabrication of a semiconductor substrate, a mask substrate, etc.
申请公布号 JPS608842(A) 申请公布日期 1985.01.17
申请号 JP19830115960 申请日期 1983.06.29
申请人 TOSHIBA KK 发明人 TADA TSUKASA;KUMAGAI AKITOSHI
分类号 G03C1/00;G03C5/00;G03C5/08;G03F7/095;G03F7/20;G03F7/26;H01L21/027;(IPC1-7):G03C5/00;H01L21/30 主分类号 G03C1/00
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