| 摘要 |
PURPOSE:To obtain a photosensitive resin having high heat resistance and photosensitivity suitable for formation of semiconductor patterns by using an ester compd. of copolymer of indene and maleic acid anhydride. CONSTITUTION:The copolymer of indene and maleic acid anhydride consists of a repeating unit expressed by formula I, and acid anhydride group in the repeating unit (C) is esterified with unsatd. alcohol. In the formula I, R<1> is hydrogen, alkyl group, R<2> is an alkyl group, hydrogen, aryl group, a-d are specified integers which represent mol% of each repeating unit. The esterification is effected with unsatd. alcohol of 0.1-1.8 equiv. to the anhydride group of the repeating unit (C). As for the unsatd. alcohol, allyl alcohol, hydroxyethylacrylate, hydroxyethylmethacrylate are used. |
