| 摘要 |
<p>PURPOSE:To operate a memory circuit in a high speed by controlling the state of a bistable multivibrator by a capacitor, etc., connected in series to a switching element. CONSTITUTION:When a reset pulse is applied to MOSFET 13, MOSFETs 12 and 11 which are connected to MOSFET 15 of a switching element as a prescribed resistance are turned on, and capacitor 31 which is connected in series to FET 15, which is formed by the floating capacity of a pattern, and a power source is charged in a short time. Next, a read pulse is applied to FET 14 of a memory element, and an on-bias voltage is applied to FET 15. In this case, if FETs have an enhancement characteristic, FETs 11 and 12 which form FF 10 of a bistable multivibrator continue to be in the turning-on and off state after read pulse erase and FET on-bias. Similarly, if FET 14 has a depletion characteristic, FETs 11 and 12 continue to be in the turning-off and on state in a short-time discharge through capacitor 31 and FET 14 by applying the read pulse and the on-bias. As a result, the memory circuit is read out or controlled by a short-charging and discharging period and small capacity and is operated in a high speed.</p> |
