| 摘要 |
PURPOSE:To enable to perform a fine process without causing debonding of the back electrode film of a semiconductor device by a method wherein a semiconductor film and the electrode film laminated continuously are partially removed to be divided according to irradiation of a laser beam, and the remainders of the semiconductor film are removed according to plasma etching. CONSTITUTION:An amorphous Si film 3 and a thin Al back electrode 41 are evaporated to divided SnO2 electrode films 2a, 2b... on a glass substrate 1, Nd: YAG laser is made to be irradiated by energy of 2X10<7>W/cm<2> regulating the beam diameter, and the Si film 3 and the Al film 41 are divided 6 at an interval of L1 300mum. At this time, remainders 7 are adhered to the exposing parts of gaps 6 and in the neighborhoods thereof. When CF4 plasma etching is performed next, the Al films 41a, 41b... act as masks to the amorphous Si films 3a, 3b..., and the remainders 7 are removed selectively. Then the surface is covered with the double layer electrode film 42 of an Al of an Al layer and a Ti layer, the film is separated 6' at an interval of L 20mum according to irradiation of a similar laser beam, and respective photoelectric converting regions 5a, 5b... are connected in series. According to this construction, the adjoining intervals can be reduced, and the effective area can be increased. |
