| 摘要 |
In an ion implantation system wherein an ion beam is scanned by deflection means in a predetermined direction on substrates placed on a disc rotating at a constant speed, to implant the substrates with ions; ion beam detectors are arranged in correspondence with a plurality of places of the substrate before the ion implantation. When the ion beam is scanned, sums of outputs of the respective ion beam detectors in the plurality of scanning positions are evaluated, and correction operations are executed so that they may become constant values. The scanning rate of the ion beam by the deflection means is controlled according to the corrections. Thus, when the ion beam is actually implanted into the substrate, the density of the ion beam becomes uniform.
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