| 发明名称 |
Shortwave semiconductor laser |
| 摘要 |
A laser diode having an active layer which has a composition: GaxIn1-xP with: 0.51</=x</=0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line: InzAl1-zP with: 0.45</=z</=0.49.
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| 申请公布号 |
US4494237(A) |
申请公布日期 |
1985.01.15 |
| 申请号 |
US19820388995 |
申请日期 |
1982.06.16 |
| 申请人 |
THOMSON-CSF |
发明人 |
DI FORTE POISSON, MARIE-ANTOINETTE;HIRTZ, JEAN-PIERRE;DUCHEMIN, JEAN-PASCAL;DE CREMOUX, BAUDOUIN |
| 分类号 |
H01S5/00;H01L33/00;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
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