发明名称 |
Nonvolatile read only memory device |
摘要 |
A nonvolatile read only memory detects a time varying change of the amount of data written in the memory cell transistor using a circuit for supplying a constant potential which is higher than the threshold voltage of a reference cell transistor and which is independent of a power source voltage used for reading out connected to the gate of the reference cell transistor.
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申请公布号 |
US4494219(A) |
申请公布日期 |
1985.01.15 |
申请号 |
US19820344050 |
申请日期 |
1982.01.29 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
TANAKA, SUMIO;WATANABE, SHIGEYOSHI |
分类号 |
G11C17/00;G11C16/06;G11C16/28;G11C16/32;G11C29/00;G11C29/12;G11C29/24;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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