High performance MESFET transistor for VLSI implementation

摘要

A gallium arsenide buffer amplifier for use in a very large scale integrated circuits is provided. The transistor device in the buffer amplifier has a uniform depth N+ source, gate and drain region and the N+ dopant concentration is made very high which effectively reduces the resistance of the transistor device and permits the area of the device to be reduced by more than one order of magnitude while maintaining high current and power levels.