| 摘要 |
PURPOSE:To enhance transition probability and to improve light emitting efficiency, by providing energy barriers on both surfaces of a thin film of a semiconductor, in a light emitting element using an indirect transition type semiconductor. CONSTITUTION:Both sides of a thin film 1 of an indirect transition type semiconductor AlAs are held by AlP substrates 2 and 3, and electrodes 4 and 5 are formed. The width of the forbidden band of the substrates 2 and 3 is large with respect to the indirect transition type semiconductor AlAs. Therefore energy barriers are formed against the electrons of AlAs. Thus the electrons of AlAs are confined by the energy barriers and become a standing wave. Therefore, transition to a valence band becomes easy. Thus transition probability is improved to the large extent. Intense light is generated in the region of AlAs, and availability as a light emitting diode can be implemented. |
