| 摘要 |
PURPOSE:To almost eiminate the backward scattering and the damage to a substrate by a method wherein an organic polymer film is dry-etched with a dry etching resistnt thin film pattern irradiated with ion beams as a mask. CONSTITUTION:When an Si oxide film 11 formed on the surface of the Si substrate 10 is processed, the thick organic polymer film 12 is formed by coating on the film 11, and further an Si film 13 as the second layer film is formed by electron beam vapor deposition. Next, the film 13 is etched to a pattern of a desired shape with convergent deflection ion beams 16, and the film 12 is etched 17 with the pattern as a mask. Successive etching sputter-etching 18 with the pattern of the film 12 as a mask enables to transcribe a desired pattern to the Si oxide film 11 with good accuracy. |
