| 摘要 |
PURPOSE:To stop the diffusion of Au to a semiconductor effectively and to alleviate electrode interface stress, by alternately laminating two kinds of barrier metals. CONSTITUTION:On an InP semiconductor 1, Ti metal layers 2, which are the first metal layers, and Pt metal layers, which are to become barrier metal and are the second metal layers, are laminated by three layers for each kind. Then an Au metal 4 is evaporated. Since many layers of Ti and Pt are alternately laminated, many interfaces of Ti and Pt are provided. Many TiPt alloy layers are formed at the Ti/Pt interfaces by heat treatment. Therefore, prevention of diffustion of Au is performed more effectively than the conventional metho by the TiPt alloy layers. Since the metal layers having different stress to each other are alternately laminated, the interface stress is alleviated. |
