发明名称 DEVICE FOR PRODUCING HYDROGENATED AMORPHOUS SILICON
摘要 PURPOSE:To provide a titled device which forms pinhole-free hydrogenated amorphous silicon by the constitution in which a leak line is provided to a gas supply system for supplying a gaseous raw material to a glow discharge device to prevent intrusion of impurities into the gaseous raw material. CONSTITUTION:A gaseous raw material contg. silane, hydrogen, etc. is introduced from a gas supply line into a glow discharge device which is evacuated by a vacuum evacuating system and hydrogenated amorphous silicon is laminated on a base by the decomposition of the gas by glow discharge. A leak system 14a which introduces an inert gas to a gas supply line 12 is provided via three-way cock 12C to said supply line with such device. The cock 12C is changed over to stop supplying the gaseous raw material and to introduce an inert gas such an N2 to restore the atm. pressure in the device upon ending of the lamination operation onto the base. The base laminated with the hydrogenated amorphous silicon layer is taken out. Intrusion and sticking of suspended impurities to the gas supply system are obviated by the above-mentioned constitution and the supply of the gaseous raw material contg. no impurities in the succeeding cycle is made possible.
申请公布号 JPS605880(A) 申请公布日期 1985.01.12
申请号 JP19830113338 申请日期 1983.06.23
申请人 FUJI SHASHIN FILM KK 发明人 SAITOU MITSUO;KIDO KEISHIROU;SUNAKAWA HIROSHI;TAMURA HIROSHI;KAWAJIRI KAZUHIRO
分类号 C23C16/30;B01J19/08;C23C16/24;C23C16/44;(IPC1-7):C23C16/24;C01B33/02 主分类号 C23C16/30
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