HIGH RESOLUTION HIGH SENSITIVITY SOLID-STATE IMAGE SENSOR

摘要

PURPOSE:To improve the sensitivity and to reduce the Moire fringe effect by forming at least one of the 1st and 2nd electrode pairs into a wavy pattern being in opposite phase to adjacent electrodes mutually. CONSTITUTION:The electrode 34 extended in the horizontal direction of a solid- state image sensor is formed in zigzag pattern and has a phase of 180 deg. with adjacent electrode 34. Then the train of the octagonal expanded regions is formed in zigzag to the adjacent train at a regular interval. An octagonal source diffusion layer 31 is formed on the expanded region. A drain diffusion layer 32 and a drain contact region 35 are formed on a small region between adjacent expanded regions. The source diffusion layer 31 and the drain diffusion layer 32 are spread over a semiconductor substrate up to a position near the edge of the electrode 34 expanded in horizontal direction and a gate region 33 is formed between the electrode 34 and a thin oxide layer while the electrode 34 expanded horizontally is separated from the surface of the substrate by the thin oxide layer.