| 摘要 |
PURPOSE:To enable to form a thin film at a low temperature and at a high speed without using noxious substance such as Hg and the like by a method wherein the light of Schumann region is used as the light of energy source, and also SinH2n+2 (n=2,3,4) is used as the reactive compound for the raw material with which said thin film will be formed. CONSTITUTION:The light of Schumann region is used as the source of light when a thin film forming method is performed using a CVD device wherein light is used as the source of energy, and SinH2n+2 (n=2,3,4) is used as the raw material of silane which will be used when said thin film is formed. For example, a glass substrate 13 whereon aluminum is vapor-deposited is set on a base board 11, and after a reaction chamber 14 has been evacuated, an amorphous silicon film is formed by projecting the light coming from a hydrogen discharge tube 15 whle Si2H6 gas is being flown from an introducing hole 8, thereby enabling to form the thin film at a low temperature and at a high speed without using noxious substance. |
