| 摘要 |
PURPOSE:To prevent the dissolution of the component of the crucible and to produce a high-purity single crystal, in the production of single crystal by Czochralski process, by using a DC electric source having little ripple content for the resistance heating of the Czochralski apparatus. CONSTITUTION:Three-phase current A is supplied from the three-phase electric source 1 to the switching regulator DC electric source 2. The three-phase current A is converted to the DC current having extremely low ripple content by the DC electric source 2 according to the control signal C transmitted from the controlling device 4, and the DC current is supplied to the heater 3 for the resistance heating of the Czochralski single crystal growth apparatus. The content of the ripple having a frequency of <=1kHz in the DC current is made <=6% by this process, resulting in the prevention of the dissolution of crucible components in the molten raw material and the production of a uniform single crystal having high purity. |
